Semiconductor package and manufacturing method of the same
Number of patents in Portfolio can not be more than 2000
United States of America
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Apr 23, 2024
Grant Date -
Jul 7, 2022
app pub date -
Mar 18, 2022
filing date -
Mar 18, 2022
priority date (Note) -
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Abstract
The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, wherein the second semiconductor structure includes a conductive through silicon via, a second bonding dielectric at a back surface of the second semiconductor structure, a second bonding metallization surrounded by the second bonding dielectric and directly contacting the second bonding dielectric, and a conductive through via over a second portion of the first semiconductor structure different from the first portion.
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