Four-state ROM cell with increased differential between states
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United States of America Patent
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Oct 8, 1985
Grant Date -
N/A
app pub date -
Jun 22, 1982
filing date -
Jun 22, 1982
priority date (Note) -
Expired
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Abstract
A four-state ROM cell is improved by providing a tapered potential gate area which allows for the effective gate width to be increased and the gate length to be decreased for each succeedingly higher gain state with a single program mask at the polysilicon gate deposition stage.
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