Semiconductor having enhanced carbon doping
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United States of America Patent
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Dec 21, 2010
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N/A
app pub date -
Feb 2, 2007
filing date -
Oct 1, 2004
priority date (Note) -
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Abstract
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
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