Memory device and method of manufacturing the same

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United States of America Patent

PATENT NO 11903222
APP PUB NO 20230225138A1
SERIAL NO

18185817

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Abstract

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A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Youngjin Suwon-si, KR 146 815
Kim, Jinhong Seoul, KR 71 86
Kim, Seyun Seoul, KR 50 57
Kim, Yumin Seoul, KR 13 6
Mizusaki, Soichiro Suwon-si, KR 40 56

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