Semiconductor device and method of manufacturing semiconductor device
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United States of America Patent
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Jul 12, 2011
Grant Date -
Nov 12, 2009
app pub date -
Jul 20, 2009
filing date -
Jan 17, 2005
priority date (Note) -
Expired
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Abstract
A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.
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