Pixel sensor cell for use in an imaging device
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United States of America Patent
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Nov 1, 2005
Issued Date -
N/A
app pub date -
Jan 14, 2003
filing date -
Jun 15, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a conductive layer, an optional silicide layer, and a second insulating layer, and has a second gate formed adjacent to it which has a second conductive layer that extends at least partially over the surface of the multi-layered gate. The multi-layered gate has improved insulation, thereby resulting in fewer shorts between the conductive layers of the two gates. Also disclosed are processes for forming the multi-layered gate and the overlapping gate.
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