Integrated epitaxial metal electrodes
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United States of America Patent
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Nov 8, 2022
Grant Date -
Jun 6, 2019
app pub date -
Jan 25, 2019
filing date -
Sep 22, 2016
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Abstract
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.
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