Methods of forming switchable circuit devices
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United States of America Patent
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Mar 30, 2004
Grant Date -
Dec 25, 2003
app pub date -
Jun 21, 2002
filing date -
Jun 21, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores of the porous silicon matrix, and the material has two stable states. A second conductive layer is formed over the porous silicon matrix. A current flow between the first and second conductive layers is influenced by which of the stable states the material is in.
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