Semiconductor device
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United States of America Patent
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Nov 3, 2020
Grant Date -
May 16, 2019
app pub date -
Dec 21, 2018
filing date -
Jan 17, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.
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