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Abstract

A method for fabricating a capacitor comprises the steps of performing a planarization process after forming a diffusion barrier on a semiconductor substrate including a plug and a silicide layer, depositing a adhesion layer on the entire structure and exposing the diffusion barrier by a selectively etching process, sequentially depositing a bottom electrode, a ferroelectric layer and a top electrode on the entire structure, forming a top electrode pattern performing a plasma etching process and a first recovery thermal treatment process and forming a ferroelectric layer and bottom electrode patterns by performing a plasma etching process and a second recovery thermal treatment process.

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First Claim