Semiconductor device and semiconductor circuit

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11282949
SERIAL NO

16989101

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device of one embodiment including: a semiconductor layer with first and second planes, first and second trenches, a third trench beside the first trench, a fourth trench beside the second trench, and first to fourth semiconductor regions; first to fourth gate electrodes in the first to fourth trenches, respectively; a first electrode on the first plane, a first contact area with the semiconductor layer between the first trench and the third trench being larger than a second contact area with the semiconductor layer between the third trench and the fourth trench, a third contact area with the semiconductor layer between the second trench and the fourth trench being larger than the second contact area; a second electrode on the second plane; a first gate electrode pad connected to the first and second gate electrodes; and a second gate electrode pad connected to the third and fourth gate electrodes.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwakaji, Yoko Tokyo, JP 58 120
Matsudai, Tomoko Tokyo, JP 146 1128

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