Method of fabricating a metal contact structure
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United States of America Patent
Stats
-
Dec 22, 1998
Grant Date -
N/A
app pub date -
Apr 23, 1997
filing date -
Jun 29, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for fabricating a metal contact structure of semiconductor devices comprising forming a first conducting layer; a first insulating layer disposed on said first conducting layer; a first contact hole to said first conducting layer; wherein said first contact hole is formed in said first insulating layer; dummy conducting patterns formed in said first contact hole, wherein said conducting dummy patterns are contacted with said first conducting layer through said first contact hole, and said dummy film is partly overlapped on the said first insulating layer; a second insulating layer disposed on said first insulating layer; a second contact hole, wherein said second contact hole is formed in said second insulating layer, and wherein said first contact hole and said second contact hole substantially form a through-hole; and a second conducting layer disposed on said second insulating layer which is contacted to said dummy conducting patterns through said second contact hole.
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