Semiconductor device and driving method thereof
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United States of America Patent
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Dec 24, 2013
Grant Date -
Feb 9, 2012
app pub date -
Aug 2, 2011
filing date -
Aug 6, 2010
priority date (Note) -
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Abstract
A semiconductor device including a memory cell formed using a wide bandgap semiconductor, for example, an oxide semiconductor is provided. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. With the use of the wide bandgap semiconductor, an off-state current of a transistor included in the memory cell can be sufficiently reduced, and the semiconductor device which can hold data for a long period can be provided.
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