Method for selective removal of gate dielectric from dummy fin

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United States of America Patent

PATENT NO 11837649
APP PUB NO 20210328043A1
SERIAL NO

16939943

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Abstract

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A method includes forming an active channel region, forming a dummy channel region, forming a first gate dielectric layer over the active channel region, forming a second gate dielectric layer over the dummy channel region, removing the second gate dielectric layer from the dummy channel region, forming a gate isolation region over and contacting the dummy channel region, and forming a first gate stack and a second gate stack. The first gate stack is on the active channel region. The gate isolation region separates the first gate stack from the second gate stack.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Chih-Han Hsinchu, TW 412 1895
Lin, Shih-Yao New Taipei, TW 206 508

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