Apparatus and method for laser radiation

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United States of America Patent

PATENT NO 5900980
SERIAL NO

08797965

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kusumoto, Naoto Kanagawa, JP 249 6710
Tanaka, Koichiro Kanagawa, JP 530 11815
Teramoto, Satoshi Kanagawa, JP 312 11581
Yamazaki, Shunpei Tokyo, JP 7287 226813

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