Semiconductor device having a fuse layer
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United States of America Patent
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-
Jul 10, 2001
Grant Date -
N/A
app pub date -
Jan 7, 1999
filing date -
Jun 19, 1998
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 .mu.m or 4.5 to 5.5 .mu.m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.
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