Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

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United States of America Patent

PATENT NO 9065039
APP PUB NO 20150102440A1
SERIAL NO

14579803

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Abstract

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Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Woo Jin Yongin-si, KR 116 1191
Lee, Jang Eun Hwaseong-si, KR 26 405
Lim, Woo Chang Seoul, KR 29 538
Oh, Se Chung Hwaseong-si, KR 25 170
Park, Jeong Heon Hwaseong-si, KR 10 136
Park, Sang Hwan Hwaseong-si, KR 39 884

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