Semiconductor device
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United States of America Patent
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Jul 20, 1993
Issued Date -
N/A
app pub date -
Jul 15, 1992
filing date -
Mar 14, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device constituting a GaAs MESFET, a GaAs substrate is prepared from a base material containing boron ions as a dopant impurity having a total impurity concentration of 2.times.10.sup.17 atoms/cm.sup.3 or more. The boron ions are introduced into the GaAs substrate during crystal growth so that a uniform distribution of boron ions in the substrate results. Electrode layers are formed at predetermined portions on the GaAs substrate, and an active layer is formed to be adjacent to the electrode layers by ion implantation. Source and drain electrodes are formed on the electrode layers respectively, and a gate electrode is formed on the active layer.
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