Integrated assemblies and methods of forming integrated assemblies

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11716841
APP PUB NO 20220216224A1
SERIAL NO

17142804

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Some embodiments include an integrated assembly having a first memory region, a second memory region, and an intermediate region between the memory regions. A stack extends across the memory regions and the intermediate region. The stack includes alternating conductive levels and insulative levels. Channel-material-pillars are arranged within the memory regions. Memory-block-regions extend longitudinally across the memory regions and the intermediate region. Staircase regions are within the intermediate region. Each of the staircase regions laterally overlaps two of the memory-block-regions. First panel regions extend longitudinally across at least portions of the staircase regions. Second panel regions extend longitudinally and provide lateral separation between adjacent memory-block-regions. The second panel regions are of laterally different dimensions than the first panel regions and/or are compositionally different than the first panel regions. Some embodiments include methods of forming integrated assemblies.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chary, Indra V Boise, US 74 162
Luo, Shuangqiang Boise, US 70 63
Xu, Lifang Boise, US 95 210

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