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Abstract

A magnetostatic wave device includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. A transducer operates for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20.degree..ltoreq..vertline..theta..sub.1 +.theta..sub.2.vertline..ltoreq.35.degree., where '.theta..sub.1 ' denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and '.theta..sub.2 ' denotes an angle between a transverse direction of the transducer and a specified direction. The specified direction is parallel to a line of intersection between a horizontal plane of the magnetic thin film and a given plane which is perpendicular to the horizontal plane of the magnetic thin film and which contains a direction of the bias magnetic field. Also, there is a relation as .vertline..theta..sub.3.vertline..ltoreq.75.degree., where '.theta..sub.3 ' denotes an angle between the specified direction and the direction of the bias magnetic field.

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