Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device
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United States of America Patent
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Nov 2, 2010
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N/A
app pub date -
Feb 6, 2008
filing date -
Feb 8, 2007
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Abstract
A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.
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