PIN diodes for photodetection and high-speed, high-resolution image sensing
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United States of America Patent
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Aug 17, 2010
Grant Date -
Dec 13, 2007
app pub date -
Jun 13, 2006
filing date -
Jun 13, 2006
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Abstract
The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.
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