Method and structure to decrease area capacitance within a buried insulator device
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United States of America Patent
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-
Aug 15, 2006
Grant Date -
Jun 16, 2005
app pub date -
Mar 22, 2004
filing date -
Dec 28, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Method and structure to decrease area capacitance within a buried insulator device structure are disclosed. A portion of the substrate layer of a buried insulator structure opposite the insulator layer from the gate is doped with the same doping polarity as the source and drain regions of the device, to provide reduced area capacitance. Such doping may be limited to portions of the substrate which are not below the gate.
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