Magnetoresistive stack/structure and method of manufacturing same

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United States of America Patent

PATENT NO 11778919
APP PUB NO 20220045269A1
SERIAL NO

17510818

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Abstract

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A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.

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Patent Owner(s)

Patent OwnerAddress
EVERSPIN TECHNOLOGIES INC1300 N ALMA SCHOOL ROAD CHANDLER AS 85224

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aggarwal, Sanjeev Scottsdale, US 148 1924
Deshpande, Sarin A San Jose, US 48 539
Mudivarthi, Chaitanya Sunnyvale, US 20 133
Nagel, Kerry Joseph Scottsdale, US 47 178

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