Multi-channel devices and methods of manufacture

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United States of America Patent

PATENT NO 11715779
SERIAL NO

17682604

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Abstract

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The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chen-Ping Toucheng Township, TW 42 95
Chiu, Chih-Chung Hsinchu, TW 19 53
Kao, Kuei-Yu Hsinchu, TW 46 26
Lin, Chih-Han Hsinchu, TW 412 1895
Lin, Shih-Yao New Taipei, TW 206 508

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