pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same
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United States of America Patent
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Apr 19, 2005
Grant Date -
Jul 1, 2004
app pub date -
Jul 10, 2003
filing date -
Dec 30, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a p-channel metal-oxide-semiconductor (pMOS) device having an ultra shallow epi-channel satisfying a high doping concentration required for a device of which gate length is about 30 nm even without using a HALO doping layer and a method for fabricating the same. The pMOS device includes: a semiconductor substrate; a channel doping layer being formed in a surface of the semiconductor substrate and being dually doped with dopants having different diffusion rates; a silicon epi-layer being formed on the channel doping layer, whereby constructing an epi-channel along with the channel doping layer; a gate insulating layer formed on the silicon epi-layer; a gate electrode formed on the gate insulating layer; a source/drain extension region highly concentrated and formed in the semiconductor substrate of lateral sides of the epi-channel; and a source/drain region electrically connected to the source/drain extension region and deeper than the source/drain region.
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