Backplane, preparation method with dual damascene steps

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United States of America Patent

PATENT NO 11742467
APP PUB NO 20210036196A1
SERIAL NO

16920401

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Abstract

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A preparation method of a backplane includes: forming an insulating structure layer having a groove on a base substrate by a mask exposure process, the groove being used for accommodating a metal trace; and repeating a metal sub-layer forming step including an ashing process and a wet etching process multiple times to form the metal trace positioned in the groove.

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Patent Owner(s)

  • BOE TECHNOLOGY GROUP CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ban, Shengguang Beijing, CN 29 46
Cao, Zhanfeng Beijing, CN 166 312
Liang, Zhiwei Beijing, CN 55 52
Liu, Yingwei Beijing, CN 55 62
Luo, Wenqian Beijing, CN 9 1
Wang, Ke Beijing, CN 368 2847

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