Complementary switch element
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United States of America
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Apr 30, 2024
Grant Date -
Mar 17, 2022
app pub date -
Dec 25, 2019
filing date -
Dec 25, 2019
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Abstract
This complementary switch element includes: a first TFET having a first conductive channel; and a second TFET having a second conductive channel. Each of the first TFET and the second TFET includes: a group IV semiconductor substrate doped in a first conductive type; a nanowire which is formed of a group III-V compound semiconductor and is disposed on the group IV semiconductor substrate; a first electrode connected to the group IV semiconductor substrate; a second electrode connected to the nanowire; and a gate electrode. The nanowire includes a first area connected to the group IV semiconductor substrate and a second area doped in a second conductive type. In the first TFET, the second electrode is a source electrode, and the first electrode is a drain electrode. In the second TFET, the first electrode is a source electrode, and the second electrode is a drain electrode.
First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Tomioka, Katsuhiro | Hokkaido, JP | 7 | 124 |
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