Semiconductor device
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United States of America Patent
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Aug 5, 2014
Grant Date -
Oct 25, 2012
app pub date -
Apr 18, 2012
filing date -
Apr 22, 2011
priority date (Note) -
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Abstract
A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.
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