Multiplication device comprising resin-dispersed organic semiconductor film and method for producing the same
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United States of America Patent
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Apr 12, 2005
Grant Date -
Sep 25, 2003
app pub date -
Feb 27, 2003
filing date -
Sep 1, 2000
priority date (Note) -
Expired
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Abstract
A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.
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