Method of manufacturing a flash memory having a select transistor
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United States of America Patent
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Mar 18, 2003
Issued Date -
N/A
app pub date -
Sep 12, 2001
filing date -
Nov 26, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to the present invention, there is disclosed a 2-transistors type flash memory, wherein a memory-transistor is composed of layers of structure consisting of a floating gate and a control gate separated by a first insulating film; and, at least, a gate electrode of a select-transistor is composed of a single layer of a polysilicon film, which is formed from the same layer as the floating gate electrode of the memory-transistor and then doped to have an enhanced dopant concentration by ion implantation performed in the step of forming source-drain regions of the transistors.
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