Wafer processing with water vapor pumping
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United States of America Patent
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Mar 26, 2002
Issued Date -
N/A
app pub date -
Jul 6, 2000
filing date -
Jul 31, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10.sup.-7 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.
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