Multilevel semiconductor device and structure with electromagnetic modulators
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United States of America Patent
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Nov 2, 2021
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May 25, 2021
filing date -
Oct 13, 2010
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Abstract
A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon, where the second level includes crystalline silicon; an oxide layer disposed between the first level and the second level; and a plurality of electromagnetic modulators, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
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