Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11515157
APP PUB NO 20200335333A1
SERIAL NO

16682573

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Abstract

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A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Se-Hun Gyeonggi-do, KR 4 6
Kil, Deok-Sin Gyeonggi-do, KR 45 1019
Kim, Yu-Jin Gyeonggi-do, KR 62 495

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