Semiconductor device and fabrication method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11201222
APP PUB NO 20210257475A1
SERIAL NO

16771670

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Abstract

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The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a barrier layer disposed above the substrate, and a dielectric layer disposed on the barrier layer and defining a first recess. The semiconductor device further includes a spacer disposed within the first recess and a gate disposed between a first portion of the spacer and a second portion of the spacer, wherein the gate defining a first recess.

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Patent Owner(s)

  • INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wong, King Yuen Zhuhai, CN 70 99

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