Self-aligned scheme for semiconductor device and method of forming the same

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United States of America Patent

PATENT NO 11342222
APP PUB NO 20210098290A1
SERIAL NO

16932208

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Abstract

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Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chii-Ping Hsinchu, TW 45 141
Hsueh, Hsiu-Wen Taichung, TW 28 28
Tseng, Ya-Ching Hsinchu, TW 10 12
Wu, Cai-Ling Hsinchu, TW 12 6
Yang, Neng-Jye Hsinchu, TW 41 54

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