Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11456373
APP PUB NO 20200259001A1
SERIAL NO

16861710

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Abstract

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In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant; and a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant decreasing in a direction extending from a top of the fin to a bottom of the fin.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Chia-Ling New Taipei, TW 26 72
Chen, Liang-Yin Hsinchu, TW 121 365
Chien, Wei-Ting Hsinchu, TW 35 56

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