Method for increasing fin density

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United States of America Patent

PATENT NO 8963206
APP PUB NO 20140054650A1
SERIAL NO

13595232

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Abstract

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The present disclosure is directed to a method of manufacturing a FinFET structure in which at least one initial set of fin structures is formed by photolithographic processes, followed by forming an additional fin structure by epitaxial growth of a semiconductor material between the initial set of fin structures. The method allows for formation of FinFET structures having increased fin density.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Colinge, Jean-Pierre Hsinchu, TW 161 4549

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