Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip

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United States of America Patent

PATENT NO 11901240
APP PUB NO 20220230924A1
SERIAL NO

17223803

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Abstract

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Provided is a vertical field-effect transistor (VFET) device which includes: a substrate; a plurality of single-fin VFETs including respective 1st fin structures on the substrate; and a plurality of multi-fin VFETs each of which includes a plurality of 2nd fin structures on the substrate, wherein a fin pitch of the 2nd fin structures is smaller than a fin pitch of the 1st fin structures.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Seo, Kang Ill Springfield, US 19 9
Yim, Jeonghyuk Halfmoon, US 16 21

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