Lithographic apparatus and device manufacturing method
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United States of America Patent
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Mar 1, 2011
Grant Date -
Jul 31, 2008
app pub date -
Mar 31, 2008
filing date -
Oct 12, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
By proper selection of illumination configuration, mask transmission, and mask bias, complex patterns of contact holes may be imaged with sufficient latitude for manufacturing at minimum half-pitches of k.sub.1=0.40 or below. In an embodiment, a method of transferring an image of a mask pattern onto a substrate with a lithographic apparatus is presented. The method includes illuminating a mask pattern of an attenuated phase shift mask with an illumination configuration including on-axis and off-axis components, the off-axis component of the illumination being an annular illumination extending near a pupil edge, and projecting an image of the illuminated mask pattern onto the substrate.
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