Semiconductor device and data storage system including the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11935597
SERIAL NO

17523337

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Abstract

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A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconductor substrate.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Jaeho Suwon-si, KR 16 21
Hwang, Sungmin Suwon-si, KR 22 114
Kim, Jiwon Suwon-si, KR 89 183
Lim, Joonsung Suwon-si, KR 24 21
Sung, Sukkang Suwon-si, KR 36 12

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