Memory device for performing program verify operation and method of operating the same

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United States of America Patent

PATENT NO 11335406
APP PUB NO 20210366550A1
SERIAL NO

17075589

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Abstract

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Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of cell strings, a peripheral circuit, and control logic. Each of the cell strings includes a drain select transistor, a source select transistor, and a plurality of memory cells that are coupled in series between the drain select transistor and the source select transistor. The peripheral circuit may be configured to perform a program operation and a program verify operation on a cell string that is selected from among the plurality of cell strings. The control logic may be configured to control the peripheral circuit to boost a channel voltage of at least one unselected cell string, among the plurality of cell strings, based on a comparison between a degree of progress of the program operation and a reference degree of progress during the program verify operation.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Sung Hoon Icheon-si, KR 30 172
Choi, Se Kyoung Icheon-si, KR 7 16
Sim, Jae Sung Icheon-si, KR 12 44

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