Annealing process and device of semiconductor wafer
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United States of America Patent
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Aug 22, 2006
Grant Date -
Jul 15, 2004
app pub date -
Nov 20, 2003
filing date -
Nov 27, 2002
priority date (Note) -
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Abstract
A device and method for annealing a wafer. The preferred embodiment includes applying a basic thermal budget to a weakened zone of a wafer, substantially evenly over the weakened zone. The basic thermal budget is insufficient to detach a detachment layer from a remainder of the wafer at the weakened zone. An additional thermal budget is applied locally in an initiation region of the weakened zone to initiate the detachment of the detachment layer at the weakened zone.
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