Read-only memory construction and related method

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United States of America Patent

PATENT NO 4546456
SERIAL NO

06502071

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Abstract

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A read-only memory circuit having, for a given memory access time, a power requirement of approximately one half of the power requirement needed to allow for a worst-case condition in which all bit storage locations may be in a binary memory state requiring maximum power consumption. Information stored in each row of the memory circuit is selectively complemented to minimize the power consumption in the individual rows and columns. Tables are used to store complement indicators for the rows and columns, and decoding circuitry selectively complements data read from the memory circuit, in accordance with the stored complement indicators.

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Patent Owner(s)

  • FAIRCHILD SEMICONDUCTOR CORPORATION;TRW LSI PRODUCTS INC., A CORP. OF DE.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Buie, James L Panorama City, CA 1 4

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