Vertical thing-film transistor and application as bit-line connector for 3-dimensional memory arrays

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United States of America Patent

PATENT NO 11398492
APP PUB NO 20200258897A1
SERIAL NO

16786463

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Abstract

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A memory circuit includes: (i) a semiconductor substrate having a planar surface, the semiconductor substrate having formed therein circuitry for memory operations; (ii) a memory array formed above the planar surface, the memory array having one or more electrodes to memory circuits in the memory array, the conductors each extending along a direction substantially parallel to the planar surface; and (iii) one or more transistors each formed above, alongside or below a corresponding one of the electrodes but above the planar surface of the semiconductor substrate, each transistor (a) having first and second drain/source region and a gate region each formed out of a semiconductor material, wherein the first drain/source region, the second drain/source region or the gate region has formed thereon a metal silicide layer, and (b) selectively connecting the corresponding electrode to the circuitry for memory operations.

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Patent Owner(s)

  • SUNRISE MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Wu-Yi Henry San Jose, US 35 554
Harari, Eli Saratoga, US 109 3711
Herner, Scott Brad Lafayette, US 134 2559
Yan, Tianhong Saratoga, US 74 1146
Zhou, Jie San Jose, US 268 2401

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