Method for producing magnetic memory device
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United States of America Patent
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Jul 24, 2007
Grant Date -
Jul 27, 2006
app pub date -
Mar 27, 2006
filing date -
Mar 29, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.
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