Field effect-controlled, vertical semiconductor component
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 9, 2002
Issued Date -
N/A
app pub date -
May 30, 2001
filing date -
May 30, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The field effect-controlled, vertical semiconductor component is disposed in a semiconductor element and contains at least one internal zone of the first conductivity type, at least one basic zone of the second conductivity type which adjoins the internal zone and a first surface of the semiconductor element, and at least one source zone of the first conductivity type which is disposed in the basic zone. At least one further basic zone of the second conductivity type is spaced apart from the basic zone by an intermediate zone of the first conductivity type, and at least one source contact zone is provided which connects the source zones, the basic zones and the further basic zones to one another with low impedance.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully