Wimpy device by selective laser annealing

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United States of America Patent

PATENT NO 9911656
APP PUB NO 20180053691A1
SERIAL NO

15241858

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Abstract

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A method for co-integrating wimpy and nominal devices includes growing source/drain regions on semiconductor material adjacent to a gate structure to form device structures with a non-electrically active material. Selected device structures are masked with a block mask. Unmasked device structures are selectively annealed to increase electrical activity of the non-electrically active material to adjust a threshold voltage between the selected device structures and the unmasked device structures.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3077 29988
Loubet, Nicolas J Guilderland, US 56 324
Miao, Xin Guilderland, US 355 2302
Reznicek, Alexander Troy, US 1414 11320

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