Non-volatile transistor embedded static random access memory (SRAM) cell

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United States of America Patent

PATENT NO 11475941
SERIAL NO

17110674

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Abstract

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The present disclosure relates to a structure including a latch circuit, a first non-volatile field effect transistor (FET) connecting to a first side of the latch circuit and a bit line, and a second non-volatile field effect transistor (FET) connecting to a second side of the latch circuit and a complementary bit line.

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Patent Owner(s)

  • GLOBALFOUNDRIES U.S. INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jaiswal, Akhilesh R West Lafayette, US 7 4
Paul, Bipul C Mechanicville, US 68 309
Soss, Steven R Saratoga Springs, US 23 188

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