Methods of forming phase change storage cells for memory devices
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United States of America Patent
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Jun 17, 2008
Grant Date -
Jan 25, 2007
app pub date -
Apr 10, 2006
filing date -
Mar 4, 2003
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Abstract
Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist phase change material pattern has a higher resistance than the first phase change material pattern. Methods of fabricating such storage cells and/or memory devices are also provided.
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